Exact resolution of coupled Schrödinger–Poisson equation: application to accurate determination of potential profile in HEMTs

Abstract

An exact solution of a combination of the nonlinear Schrödinger and Poisson equations is presented for the study of potential energy and carrier distributions at the interface of a single heterojunction. The shapes of the wave function and the potential (i.e. conduction band bending) are not required to be known a priori and are calculated from the doping rates and energy gaps on both sides of the heterojunction.