Abstract
We have derived an exact expression for the one-dimensional atomic pair correlation function of the combined overlayer and substrate system in the very first stages of epitaxy. The overlayer can have an arbitrary island size distribution. This pair correlation function is then used to evaluate the widths and shapes of low-energy (or high-energy) electron diffraction intensity profiles. Several model calculations have been computed and the diffraction profiles resemble the recent molecular beam epitaxy measurements of Si/Si(111) and W/W(110) systems reported by Henzler and co-workers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
