Abstract
In this paper, thermal annealing in nitrogen atmosphere at temperatures from 900 to 1100°C was done on the SiOx films to follow the changes in their optical and structural properties. Micro-Raman measurements revealed the existence of a nanocrystalline phase and it become dominant as the annealing temperature increased from 900 to 1100°C. The last might be an indicative of presence of silicon clusters with high crystallization grade embedded in the SiOx matrix. X-ray diffractograms from samples annealed at 1100°C showed reflections at 2θ=28.4, 47.3, and 56.1° ascribed to (111), (220), and (311) planes of the silicon respectively. HRTEM measurements confirmed the existence of silicon nanocrystals (Si-ncs) in the SiOx films and both the average size and number of the Si-ncs were modified by the annealing process. Photoluminescence (PL) measurement displayed a broad emission from 400 to 1100nm. This emission was related to the number of nanocrystals and to the creation of interface defects in SiOx films.
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