Abstract
Evolution of threading screw dislocation (TSD) conversion during the solution growth of 4H-SiC on a vicinal crystal of 4H-SiC(0001) was investigated by synchrotron X-ray topography. Selecting appropriate X-ray wavelength and g vector, we can change the penetration of X-ray, and the dislocation behaviors with the different depth were successfully observed. Evidently TSDs parallel to the c-axis having c-component Burgers vector were changed into defects on the (0001) basal planes with the same Burgers vector as the TSDs, propagating to the [11\documentclass[12pt]{minimal}\begin{document}$\bar{2}$\end{document}2¯0] step-flow direction by advancing macrosteps during the solution growth. The TSD conversions stochastically took place during the growth. The conversion rate was almost uniform and finally almost all TSDs were converted to the basal plane defects. The conversion rate was low at the very early stage of the growth, which implies that the macrosteps were not formed at the initial stage of the solution growth.
Highlights
Silicon carbide (SiC) is an attractive material for high-power, high-temperature, and highfrequency devices because of its wide band gap, high break down field, and high thermal conductivity.[1]
We have revealed that threading screw dislocations (TSDs) are converted to defects on the basal planes propagating to the step-flow direction during the solution growth on vicinal seed crystals of SiC(0001).[7,8,9]
We investigated the evolution of threading screw dislocation conversion during the solution growth of 4H-SiC on a vicinal seed crystal by grazing incident reflection synchrotron X-ray topography with the different penetration depth
Summary
Silicon carbide (SiC) is an attractive material for high-power, high-temperature, and highfrequency devices because of its wide band gap, high break down field, and high thermal conductivity.[1]. Evolution of threading screw dislocation conversion during solution growth of 4H-SiC Ujihara1 1Department of Materials Science and Engineering, Nagoya University, Chikusa-ku, Furo-cho, 464-8603 Nagoya, Japan 2Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Furo-cho, 464-8603 Nagoya, Japan (Received 4 March 2013; accepted 17 June 2013; published online 13 August 2013)
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