Abstract
The structural and optical properties of erbium-doped silicon-rich silica samples containing different Si concentrations are studied. Intense photoluminescence (PL) from luminescence centers (LCs) and silicon nanoclusters (Si NCs), which evolves with annealing temperatures, is obtained. By modulating the silicon concentrations in samples, the main sensitizers of Er3+ ions can be tuned from Si NCs to LCs. Optimum Er3+ PL, with an enhancement of more than two, is obtained in the samples with a medium Si concentration, where the sensitization from Si NCs and LCs coexists.
Highlights
There has been a growing interest in developing Sicompatible light sources for photonic applications [1]
A silicon-rich oxide (SRO) matrix embedded with silicon nanoclusters (Si NCs) provides a promising approach, since the quantum confinement effect of Si NCs can overcome the inability of Si bulk with indirect bandgap and significantly promote the luminescence efficiency
The ratio of the Si = O symmetric stretching mode in the erbium-doped silicon-rich oxide (SROEr) films is shown in the inset of Figure 1, and it decreases with the increase of the annealing temperatures, due to the decomposition of the Si = O bonds by Er ions during thermal treatments [19]
Summary
There has been a growing interest in developing Sicompatible light sources for photonic applications [1]. SRO acts as an efficient host matrix for rare-earth ions such as Nd3+ [11], Tb3+ [12], and Er3+ [13]. Among these ions, the Er3+ ion has attracted much research interest [14,15,16,17,18,19,20,21,22,23,24,25,26,27,28,29], as the 1.54-μm luminescence of Er3+ lies in the third telecom window.
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