Abstract
We report the evolution of the phase shift, θ0, extracted from traces of the diagonal resistance, Rxx, vs. the linear polarization angle, θ, at oscillatory extrema of the microwave radiation induced magnetoresistance oscillations over the 36 ≤ f ≤ 40 GHz band in GaAs/AlGaAs system. A reference phase shift for the linear polarization angle in the vicinity of the specimen is obtained with the help of a sensitive carbon resistor. We fit an empirical cosine square law to the sinusoidal responses of Rxx vs. θ to extract the phase shift θ0. The quasi-continuous variation θ0 vs. f trace suggests a preferable polarization orientation for the specimen, and the f− and B− independence of overall average of θ0.
Highlights
Microwave radiation-induced zero-resistance states and associated magnetoresistance oscillations (MRIMOs)[1, 2], which appear in the 2D electron system subjected to crossed electric and magnetic fields, have revealed a ”1/4-cycle phase-shift” in its periodicity in 1/B along with a multitude of interesting properties after nearly a decade research[3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19]
We report the evolution of the phase shift, θ0, extracted from traces of the diagonal resistance, Rxx, vs. the linear polarization angle, θ, at oscillatory extrema of the microwave radiation induced magnetoresistance oscillations over the 36 ≤ f ≤ 40 GHz band in GaAs/AlGaAs system
This sinusoidal variation can be described by an empirical cosine square function, Rxx(θ) = A ± Ccos2(θ − θ0), where Rxx is diagonal magnetoresistance, θ is microwave polarization angle, θ0 is phase shift, and the plus and minus signs correspond to the oscillatory maxima and minima, respectively
Summary
Microwave radiation-induced zero-resistance states and associated magnetoresistance oscillations (MRIMOs)[1, 2], which appear in the 2D electron system subjected to crossed electric and magnetic fields, have revealed a ”1/4-cycle phase-shift” in its periodicity in 1/B along with a multitude of interesting properties after nearly a decade research[3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19]. We report the evolution of the phase shift, θ0, extracted from traces of the diagonal resistance, Rxx, vs the linear polarization angle, θ, at oscillatory extrema of the microwave radiation induced magnetoresistance oscillations over the 36 ≤ f ≤ 40 GHz band in GaAs/AlGaAs system.
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