Abstract

We have investigated the electronic structure evolution with F doping in $\mathrm{Pr}{\mathrm{O}}_{1\ensuremath{-}x}{\mathrm{F}}_{x}\mathrm{Bi}{\mathrm{S}}_{2}$ ($x=0.0,0.3,0.5$) by means of angle-resolved photoemission spectroscopy. Undoped $\mathrm{Pr}\mathrm{O}\mathrm{Bi}{\mathrm{S}}_{2}$ exhibits Fermi surface (FS) pockets around the $X$ point which can be associated with electron doping due to the ${\mathrm{Pr}}^{3+}/{\mathrm{Pr}}^{4+}$ mixed valence. At $x=0.3$, the FS pockets are expanded, and their area is almost consistent with the F doping level. Interestingly, horizontal segments facing each other in the rectangular FS pockets lose their spectral weight. The partial suppression of the FS pockets suggests possible anisotropic charge fluctuations around $x=0.3$. At $x=0.5$, the FS area is much smaller than the expected value as commonly observed for $\mathrm{Ce}{\mathrm{O}}_{0.5}{\mathrm{F}}_{0.5}\mathrm{Bi}{\mathrm{S}}_{2}$ and $\mathrm{Nd}{\mathrm{O}}_{0.5}{\mathrm{F}}_{0.5}\mathrm{Bi}{\mathrm{S}}_{2}$. In addition, the highly depleted spectral weight at the FS pockets would be consistent with evident charge fluctuations driven by atomic disorder in the $\mathrm{Bi}{\mathrm{S}}_{2}$ network.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call