Abstract
The evolution of the electron acoustic signal has been measured for Be- and Si-doped GaAs and Ga0.28Al0.19In0.53As layers with doping levels from1017 to 1020 at. cm−3. The samples have also been analyzed by cathodoluminescence spectroscopy for near-band-edge transition and deep level emission. The results are explained by the reduction of the mean free path of phonons, giving rise to a lattice thermal conductivity decrease. Meanwhile, the electronic part of the thermal conductivity of these compounds is found to be nearly negligible.
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