Abstract
It has been established that chemical etching of porous silicon in HF results in a large change in the current-voltage characteristics and photoluminescence parameters of the silicon. The results of the investigation can be used to increase the efficiency of electroluminescence structures In-〈porous Si〉-Al by increasing the injection level of minority carriers and realizing a regime of double injection and high surface recombination rate near the surface of porous silicon.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
