Abstract

The results of microwave dielectric constant ( ϵ mw ) and dc conductivity ( σ dc ) of doped polyaniline (PAN) samples in different charge delocation regimes are reported. With camphor culfonic acid doped PAN prepared in m-cresol solvent (PAN-CSA ( m-cresol)) respresenting the most delocalized material, a negative ϵ mw is measured indicating an intrinsic metallic state. The Drude model at low frequency is used to estimate a relatively small plasma frequency ω p ⋍ 0.015 eV and an anomalously long scattering time τ ⋍ 1.2 × 10 −11 s. This τ implies the importance of phonon back scattering for the most delocalized electrons as expected for the open Fermi surface of a highly anisotropic metal. Depending on the crystallinity, there are two different charge localization regimes in PAN samples: uncoupled metallic islands and coupled “mesoscopic” metallic state. The three-dimensional nature of metallic state is demonstrated by the correlation of low temperature dielectric response with the parallel and perpendicular crystalline domain lengths obtained from x-ray data. The charge localization to delocalization transition dependence on the polymer processing will be discussed. We present the temperature dependent nonmetal-metal transition for some preparations of PAN-CSA ( m-cresol). The intrinsic conductivity of metallic PAN is estimated to be ∼ 10 7 S/cm.

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