Abstract
The evolution of individual nitrogen cluster bound states into an extended state infinite supercluster in dilute GaAs${}_{1\ensuremath{-}x}$N${}_{x}$ was probed through temperature and intensity-dependent, time-resolved and magnetophotoluminescence (PL) measurements. Samples with compositions less than 0.23$%$ N exhibit PL behavior that is consistent with emission from the extended states of the conduction band. Near a composition of 0.23$%$ N, a discontinuity develops between the extended state PL peak energy and the photoluminescence excitation absorption edge. The existence of dual localized/delocalized state behavior near this composition signals the formation of an N supercluster just below the conduction band edge. The infinite supercluster is fully developed by 0.32$%$ N.
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