Evolution of structural features in GO/CdS multilayer films for advanced optoelectronic devices

Abstract

In this work graphene oxide/cadmium sulphide [GO/CdS]n multilayer films were obtained onto FTO/SLG substrates by cyclic electrophoretic deposition (EPD) and successive ion layer adsorption and reaction (SILAR) methods, with 3, 5, 7 and 10 cycles. The optical characterization for 3 cycles sample exhibits an optical band gap of ∼2.9 eV due the nanocrystalline nature of CdS, from 5 to 10 cycles a blue shift is observed in the band gap around ∼2.15 eV by the electronic disorder induced by graphene oxide intercalation and the mixture of hexagonal/cubic phases of CdS. Raman spectra shows the longitudinal optical modes LO, 2LO and 3LO, the LO peak position shows a blue shift in comparison to the bulk CdS. The multilayer films of 3 and 5 cycles shows a wide range of photoluminescence emission from 350 to 700 eV, for samples of 7 and 10 cycles a quenching and red shift is observed attributed to the CdS crystals growth with a peak emission at 615 eV from bulk CdS, which make the materials suitable for photovoltaic solar cells and UV-Vis diodes for optoelectronic devices.