Abstract
We study the structural defects in the SiOx film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution. The photoluminescence property is observed in the as-deposited and annealed samples.[-SiO3]2− defects are the luminescence centres of the ultraviolet photoluminescence (PL) from the Fourier transform infrared spectroscopy and PL measurements. [-SiO3]2− is observed by positron annihilation spectroscopy, and this defect can make the S parameters increase. After 1000°C annealing, [-SiO3]2− defects still exist in the films.
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