Abstract
The step-terrace structures at the interface between the Si layer and the buried SiO 2 layer of a Separation by IMplanted OXygen substrate has been observed by using atomic force microscopy (AFM) after removing the SiO 2 and Si layers. The time evolution of the Si–SiO 2 interface roughness during high-temperature annealing was analyzed by the scaling analysis of AFM data. The correlation length exhibited a nice correspondence to the size of square domain structures. Decreasing in the index of the length scale indicates that the growth mechanism changes as the annealing proceeds.
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