Abstract
Scanning tunneling microscopy studies of the restructuring of GaAs (001) surfaces induced by Si deposition have been performed. With increasing Si coverages, different reconstructions are developing. Their interaction with the surface step structures results in a distinct separation into different surface phases with different Si coverages, revealing unique Si distribution patterns. This phenomenon is explained by considering kinetically accessible thermodynamically determined structures.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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