Evolution of self-assembled lateral quantum dot molecules

Abstract

Self-assembled lateral InAs quantum dot molecules (QDMs) are grown by solid-source molecular beam epitaxy (MBE) using the thin-capping-and-regrowth MBE process. Thin capping of GaAs on as-grown InAs quantum dots (QDs) at low temperatures leads to nanohole templates. The shape, size and depth of nanoholes are controlled by capping thickness. Subsequent regrowth with different amounts of InAs on the templates result in nano-propeller QDs with different blades’ dimensions. We showed that the length of the propeller blades is controlled by either the capping temperature or the thickness of capping layer. When the regrowth thickness reaches 1.2 ML, different self-assembled lateral QDMs are formed depending on the shape of nanoholes. The dot uniformity and the dot size of all QDM samples are confirmed by photoluminescence (PL) measurements at 77 K. In addition, by ramping the regrowth temperature while the In shutter is open after the deposition of the capping layer, we are able to investigate the formation of nano-propeller QDs at the beginning phases and to propose a model to explain the evolution.