Evolution of R.T.S Source Activities in Saturation Range in N-MOSFETs for Different Oxidation Temperatures

Abstract

Random Telegraph Signal (R.T.S) noise measurements have been performed on N‐MOS transistors, in saturation range, from weak to strong inversion. The influence of the gate oxidation temperature on R.T.S noise sources is reported. An oxidation temperature reduction can lead to a decrease of traps‐Si/SiO2 interface distance and to a shift of the trap activation ranges toward higher gate voltage values. A detailed investigation of the evolution of R.T.S source characteristics with the oxidation temperature variation is proposed.