Abstract
We discuss the evolution, over a 40-year period, of the optical and mechanical properties of selected monoatomic, binary, and ternary semiconductors. From this systematic monitoring it can be shown that diffusion and stress relaxation processes over time lead to the host atoms migrating to their proper equilibrium positions, and a more uniform redistribution of impurities or structural defects is formed. We demonstrate that the highly ordered nature that develops over time, 40 years in this case, facilitates enhanced stimulated emission and increases the radiative recombination efficiency and spectral range of luminescence. This suggests new ways to realize semiconductor devices with greater temporal stability.
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