Abstract
AbstractNanoporous silicon layers were obtained on different types of single crystalline silicon substrates by standard electrochemical etching in HF solution. Investigations of electron structure, surface layers phase composition and photoluminescence evolution in nanoporous silicon during natural ageing for the time period for up to one year were performed with the use of the ultrasoft X‐ray emission spectroscopy (USXES), X‐ray absorption near‐edge structure (XANES) spectroscopy and photoluminescence. USXES and XANES spectra represent local partial density of states in valence and conduction band, correspondingly. The presence of the elementary silicon together with different silicon suboxides in surface layers is shown. Considerable differences in the kinetics of ageing can explain different photoluminescence properties of nanoporous silicon doped with P and Sb. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
