Abstract
Abstract The evolution of nano-cracks in mono-crystalline silicon during three-body polishing was investigated by three-dimension molecular dynamics (MD) simulations and theoretical calculations. Atomic displacement, coordination numbers (CN), temperature and stress during the polishing process are studied in detail. The results show that cracks will close rather than expand in ultraprecision mechanical polishing process. The simulation results show two different ways for crack closure due to different crack inclinations: the coordinated displacement of atoms and the phase transformation filling of atoms. Crack closure will result in significant changes in CN. Furthermore, the crack closure effect is the best at 600 K. The calculation shows an obvious uneven stress distribution along the crack line in the polishing process. In addition, the distribution of the normal stress and shear stress at the lower tip of cracks are related to the mode of closure, indicating that simulation is related to the calculated stresses in theoretical model.
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