Abstract
In this paper, we successfully grow GaAs/GaSb core-shell heterostructure nanowires (NWs) by molecular beam epitaxy (MBE). The as-grown GaSb shell layer forms a wurtzite structure instead of the zinc blende structure that has been commonly reported. Meanwhile, a bulgy GaSb nanoplate also appears on top of GaAs/GaSb core-shell NWs and possesses a pure zinc blende phase. The growth mode for core-shell morphology and underlying mechanism for crystal phase selection of GaAs/GaSb nanowire heterostructures are discussed in detail.
Highlights
In the past decades, intensive research interests have been devoted towards the study of III-V semiconductor nanowires (NWs) for their important role in the research of fundamental physical phenomena [1,2] and great potentials in future device applications of nano-electronics, opto-electronics, thermoelectrics, etc. [3,4,5]
The well-controlled synthesis of III-V NWs with a pure wurtzite (WZ) or zinc blende (ZB) phase can bring about new application possibilities, since different crystal structures can lead to different band gaps [21,22,23] and, in turn, different electronic and optical properties
NWs grown at the V/III beam equivalent pressure (BEP) ratio of 2.1 (Figure 1c) and 6.5 (Figure 1d) have a basically similar morphology as NWs shown in Figure 1b, but displays a more obvious tendency of lateral growth
Summary
Intensive research interests have been devoted towards the study of III-V semiconductor nanowires (NWs) for their important role in the research of fundamental physical phenomena [1,2] and great potentials in future device applications of nano-electronics, opto-electronics, thermoelectrics, etc. [3,4,5]. Antimonide core-shell nanowires possess some attractive properties useful for nanoscale electronics. Transport path and charge carrier type of the core-shell NWs can be effectively tuned by adjusting the Crystal structure is another main concern in III-V NWs, since structure polytypism [17,18,19] and planar defects (such as stacking defaults (SFs) and twins) have been popularly observed, which are unwanted for related device applications [20]. The well-controlled synthesis of III-V NWs with a pure wurtzite (WZ) or zinc blende (ZB) phase can bring about new application possibilities, since different crystal structures can lead to different band gaps [21,22,23] and, in turn, different electronic and optical properties. Mandl et al [19] and Pozuelo et al [29] have reported WZ structure of antimonide NWs, there is still neither theoretical prediction nor experimental data about WZstructured GaSb
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