Abstract
Vanadium oxide thin films were prepared through direct current magnetron reactive sputtering and post annealing process. The evolution of composition, microstructure, and electrical properties of as-deposited amorphous films during the annealing process was clarified by X-ray diffraction, scanning electron microscopy and temperature-dependent resistance measurement. A new composition of thin film was acquired which consisted of crystalline V6O13 and amorphous phase. Sheet resistance and temperature coefficient of resistance (TCR) of the thin film are 90kΩ/□ (measured at room temperature) and 2.52%/K, respectively. No metal-to-semiconductor transition was observed in the obtained film at temperatures ranging from room-temperature to 90°C, suggesting the thin film is suitable for the application in microbolometer.
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