Abstract
In this paper, is shown how ion milling can assist in assessing the defect structure of MCT by revealing the residual doping, and establishing the minimum level of donor concentration N md , which is needed for obtaining n-regions with a reproducible n value. For this purpose, a study of the electrical properties of ion-milled LWIR n-type MCT films, un-doped and doped with indium with the concentration N In = 5 × 1014 –1017 cm−3 is proposed.
Highlights
MCT still is holding its position as the fundamental material for midwave infrared and long- (LWIR) photodetectors
In this paper we report on applying Ion milling (IM) for the study of defects in LWIR MCT films grown by molecular beam epitaxy (MBE) on GaAs substrates with ZnTe/CdTe buffer layers
Using IM, a unique neutral defect, which forms at the stage of the growth, and which appears to be specific to our MBE films, was revealed
Summary
MCT still is holding its position as the fundamental material for midwave infrared and long- (LWIR) photodetectors. It is known that IM is capable of strongly affecting electrical properties of MCT, up to conductivity type conversion in p–type material [4] It appears, that strongly non-equilibrium processes which take place under IM, when material is oversaturated with interstitial mercury atoms HgI generated near the surface [1,2], lead to the appearance of specific defect complexes, which may not form under other conditions. That strongly non-equilibrium processes which take place under IM, when material is oversaturated with interstitial mercury atoms HgI generated near the surface [1,2], lead to the appearance of specific defect complexes, which may not form under other conditions These complexes may comprise intrinsic point and extended defects that normally do not show their presence due to their electrical neutrality or compensation [4,10]. By carefully measuring the parameters of the crystal before and after the milling, and following the disintegration of defects with time after IM (‘relaxation’), one can detect and identify these defects
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