Abstract
The annealing of low-fluence heavy-ion damaged Si crystals induced by ion-assisted treatments is reported. Damage was produced by 150 keV Au implantations at a dose of 2 × 10 13 ions/cm 2 onto 〈100〉 oriented Si single crystals and resulted in small amorphous-like regions surrounded by crystal material. The interaction of these damaged structures with defects induced by energetic ions (600 keV Kr 2+) was investigated. Kr post-irradiation resulted in either damage accumulation or annealing, depending on the substrate temperature. A transition temperature of about 420 K was found between these two different regimes. Ion-assisted processes are discussed and explained on the basis of the damage morphology.
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