Abstract
AbstractWe present in situ measurements of the intrinsic (growth) stress during nucleation and growth of thin tungsten films by chemical vapor deposition. It is shown that interfering stress sources, as recrystallization or plasic flow, do not contribute to the intrinsic stress in these films. This makes W-CVD a model system for the experimental study of the relation between the evolution of microstructure and the development ofgrowth stress.
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