Abstract
In current work, effects of rapid thermal annealing (RTA) on the interface chemistry and electrical properties of Gd-doped HfO2 (HGO)/Ge stack have been investigated systematically. It has been demonstrated that the presence of GeOx interfacial layer between HfGdO and Ge is unavoidable and appropriate annealing can improve metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, frequency dispersion, and leakage current. The involved leakage current conduction mechanisms for metal-oxide-semiconductor (MOS) capacitors based on sputtered HGO/Ge gate stacks with optimal annealed temperature also have been discussed in detail. As a result, the Al/HGO barrier height and the band offset of HGO/Ge gate stack have been determined precisely.
Highlights
Evolution of interface chemistry and dielectric properties of HfO2/ Ge gate stack modulated by Gd incorporation and thermal annealing
The involved leakage current conduction mechanisms for metal-oxide-semiconductor (MOS) capacitors based on sputtered HGO/Ge gate stacks with optimal annealed temperature have been discussed in detail
The high density of interfacial trap states (Dit) associated with dielectric/Ge interface causes Fermi level pinning at midgap, which inhibits formation of accumulation or inversion layers and degradation of the drive current and the sub-threshold swing
Summary
Evolution of interface chemistry and dielectric properties of HfO2/Ge gate stack modulated by Gd incorporation and thermal annealing. Effects of rapid thermal annealing (RTA) on the interface chemistry and electrical properties of Gd-doped HfO2 (HGO)/Ge stack have been investigated systematically.
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