Abstract
The process of hydrogen plasma reacting with a Si(110) surface is investigated. The reaction process is measured with in situ infrared absorption spectroscopy (IRAS) in multiple internal reflection geometry. We monitor the evolution of hydride components in the Si(110) surface exposed to the hydrogen plasma. IRAS data show that the surface atomic arrangement of a Si(110) surface is distorted by plasma exposure. H is inserted into Si crystal and defects and vacancies are generated. Further, hydrogen plasma exposure creates silicon dihydride $({\rm SiH}_{2})$ components in an amorphous layer. The ${\rm SiH}_{2}$ formation rate is 0.5, by a comparison with the hydrogen plasma exposure time.
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