Abstract

We present the fabrication of GaSb quantum rings (QRs) on the GaAs (001) substrates by droplet epitaxy technique using solid-source molecular beam epitaxy (MBE). In droplet epitaxy process, Ga was deposited on GaAs surface to form liquid Ga droplets and then exposed to Sb flux for crystallization. The evolution of Ga droplets into GaSb QRs is discussed and tracked by means of reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM).

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