Abstract
ABSTRACTWafer bowing control is critical to improve epitaxial growth quality, especially for large wafers inside a metal–organic chemical vapor deposition reactor. An in-situ monitoring system was developed for real-time characterization of curvature mapping and epitaxial layer reflectance and temperature. Using deflectometry with parallel laser beams and position detector arrays, simultaneous curvature scans were conducted in two perpendicular directions over 4-in wafers. The developed system eliminated the effect of vibrations. Growth transients and curvature mappings are presented for the stages of epitaxial growth. Thermal and thickness gradient effects were analyzed to explain aspherical bowing. This technique appears suitable for closed-loop process optimization during light-emitting diode growth and other epitaxial growth processes.
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