Evolution of femtosecond laser-induced damage in doped GaN thin films

Abstract

Mg- and Si-doped GaN layers deposited by metalorganic chemical vapor deposition method were irradiated with femtosecond pulse duration laser of three different wavelengths 1,030, 515 and 343 nm. Both single and multiple shot laser induced damage thresholds of doped GaN layers were evaluated and discussed. The scanning electron microscopy employed with electron beam induced current and energy dispersive X-ray techniques were used to study laser damage morphology. It was observed that ablated area and laser-induced damage increased with irradiation fluence. The mechanism of damage generation by Gaussian beam profile laser was considered.