Abstract
Two distinct maxima ${E}_{W}$ and ${E}_{W}^{\ensuremath{'}}$ are observed in the resonant Raman-scattering profile for the LO phonon asymmetric linewidth broadening in ${\mathrm{GaAs}}_{1\ensuremath{-}x}{\mathrm{N}}_{x}$ and are attributed to states arising from a splitting of the quadruply degenerate conduction band near the L point. The data provide further insight into the physics underlying the giant band-gap bowing observed in ${\mathrm{GaAs}}_{1\ensuremath{-}x}{\mathrm{N}}_{x},$ as well as reveal asymmetric linewidth broadening to be a powerful signature for studying strongly localized impurity states in semiconductors.
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