Abstract
Abstract We discuss the limitations of the earlier models in explaining the evolution of diffuse scattering during the 2H to 6H direct transformation in single crystals of SiC above 2000°C. Monte Carlo technique is employed to predict the diffuse scattering along c∗ using a nucleation and growth model. The results obtained by simulation are compared with those obtained analytically, assuming sequential insertion of stacking faults. The predicted diffraction effects are found to be in agreement with those observed experimentally. It is shown that the short range and long range correlations are in conflict for the arrest state of the 2H to 6H ‘direct’ transformation.
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