Abstract

We have studied the influence of oxygen partial pressure (OPP; 250mTorr–1×10−5Torr) and Fe doping (2 and 4at.%) on structural and electrical properties of TiO2 thin films on LaAlO3 substrates. X-ray photoelectron spectroscopy suggests that Fe is not in metal cluster form. It is found that the evolution of the three phases; anatase, rutile and brookite of TiO2 as well as the magneli phase (TinO2n−1) strongly depends on the OPP and Fe doping concentration. All the films grown at 250mTorr show insulating behavior, whereas films grown at 1×10−2 and 1×10−4Torr reveal high temperature metallic to low temperature semiconducting transition. Interestingly, films deposited at 1×10−5Torr reveal charge ordering, which is contributed to the magneli phase of TiO2. The present study suggests that functionality of TiO2 thin film based devices can be tuned by properly selecting the OPP and dopant concentration.

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