Abstract
We demonstrate the preparation of the system HfO 2/Si(1 0 0) by direct evaporation of hafnium dioxide from a specially prepared electron beam evaporator. Investigating the system by means of photoelectron spectroscopy in the soft X-ray regime, we show the system’s interface being free of silicon dioxide and hafnium silicide after evaporation. Upon annealing the formation of SiO 2 at the interface is investigated by using high resolution photoemission spectra. Their separation into different sub-oxides at the interface is presented. The structural order at the crystalline/amorphous interface is investigated by X-ray photoelectron diffraction. The system’s degradation is observed at above 700 °C.
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