Abstract
Evolution of an anomalously bright photoluminescence (PL) pattern of the (D +, X) bound-exciton in n-GaAs at 4.2 K observed under an applied pulsed voltage has been investigated. The bright PL pattern observed at the onset of the pulse voltage characterizes well the formation of a current density filament. Also we found the Joule heat effect during the impact ionization avalanche of the neutral shallow donors, followed by the quenched PL pattern at the end of the pulse voltage. By the Joule heat effect, the ghost PL pattern of the filament can be seen during the off-state of the pulsed voltage. The observations of the bright PL pattern give a quite new result concerning the electron-impact formation process of the excitons bound to the ionized donors (D +, X), which can be explained by the computer simulation of the one-level impact ionization model.
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