Abstract
The specific faceting behavior of gallium arsenide grown by molecular beam epitaxy (MBE) on dry-etched patterned substrates is investigated on a micronic and submicronic scale. In addition to the classical A-type and B-type planes observed on overgrown [1 1 0] and [110] channels and grooves, we allow the formation of all possible facet orientations by using patterned dots and disks. The evolution of the growth patterns leads to a wealth of high-index facets, only few of which are of A- or B-type. Strikingly, no proper {111} faceting is seen. Also patterning is shown to induce a growth instability of the hill-and-valley type on the (001) standard plane. The dimensions of the facets are discussed with respect to surface transport. An interpretation of our faceting data in terms of steps, kinks and surface polarity is proposed.
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