Abstract
The coupling of resistance switching (RS) behavior and N-type negative differential resistance (NDR) effect provides a promising physical basis for the preparation of low-power and multifunctional electronic devices. N-type NDR effect can be expressed by the relationship between peak voltage (VP), valley voltage (VV) and the homologous current (IP, IV). In this work, a memristive device with Ag/BFO@EA/FTO structure was prepared by inserting BiFeO3 (BFO) nanoparticles into egg albumen (EA) as the functional layer, and observed the evolution between RS and NDR coupled RS (NRS) behaviors with the regulation of applied voltage window. Besides, it can be observed a wide current gap of 18.6 mA between IP and IV in the narrow voltage gap (about 0.4 V) between VP and VV, indicating that the device has low power consumption and fast reading/writing speed when it is applied to information processing. Finally, based on the obtained data, it was deeply analyzed the mechanism of NRS effect in the Ag/BFO@EA/FTO memristive device. Therefore, this work provides a new perspective for realizing multi-level storage and multifunctional advanced applications in the memristive device.
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