Abstract
An investigation on the recovery characteristics of p-MOSFET with ultra-thin decoupled plasma nitrided gate oxide under negative bias temperature (NBT) stress is presented. The electron trapping assisted NBTI recovery mechanism is proposed with new evidence on the dependence of recovery rate on source/drain voltage, i.e. gate oxide field. Further, the findings about the different gate current behaviour and the source/drain voltage dependency indicate that the relaxation of positive charge, instead of interface trap, is the major component in the NBTI recovery stage.
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