Abstract
We report the resistivity of 5 Cu films approximately 65 nm thick, measured between 5 and 290 K, and the transverse magnetoresistance and Hall effect measured at temperatures 5 K < T < 50 K. The mean grain diameters are D = (8.9, 9.8, 20.2, 31.5, 34.7) nm, respectively. The magnetoresistance signal is positive in samples where D > L/2 (where L = 39 nm is the electron mean free path in the bulk at room temperature), and negative in samples where D < L/2. The sample where D = 20.2 nm exhibits a negative magnetoresistance at B < 2 Tesla and a positive magnetoresistance at B > 3 Tesla. A negative magnetoresistance in Cu films has been considered evidence of charge transport involving weak Anderson localization. These experiments reveal that electron scattering by disordered grain boundaries found along L leads to weak Anderson localization, confirming the localization phenomenon predicted by the quantum theory of resistivity of nanometric metallic connectors. Anderson localization becomes a severe obstacle for the successful development of the circuit miniaturization effort pursued by the electronic industry, for it leads to a steep rise in the resistivity of nanometric metallic connectors with decreasing wire dimensions (D < L/2) employed in the design of Integrated Circuits.
Highlights
We report the resistivity of 5 Cu films approximately 65 nm thick, measured between 5 and 290 K, and the transverse magnetoresistance and Hall effect measured at temperatures 5 K < T < 50 K
A peculiar feature of this quantum theory, is that it predicts that when the mean grain diameter D characterizing the grain size distribution in the nanometric metallic connector is appreciably smaller than L(T), the electron mean free path in the bulk at temperature T, electron scattering by successive disordered grain boundaries found along a mean free path becomes dominant, and contributes significantly to the increase in resistivity with shrinking wire dimensions, leading to weak Anderson localization
If we were to apply these arguments to a metallic specimen endowed with a spherical Fermi surface, since the carriers involved in charge transport are those located on the Fermi sphere, we would arrive at the conclusion that r = < τ(ε)2 > / < τ(ε) > 2, r = 1 and RH = R0
Summary
We report the resistivity of 5 Cu films approximately 65 nm thick, measured between 5 and 290 K, and the transverse magnetoresistance and Hall effect measured at temperatures 5 K < T < 50 K.
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