Evidence of surface states for 4H-SiC MESFETs on semi-insulating substrates by current transient spectroscopy

M Gassoumi,N Sghaier,F Chekir,I Dermoul,C Dua ,E Morvan ,H Maâref ,Jean-Marie Bluet ,G Guillot ,O Noblanc ,Christian Brylinski

doi:10.1109/icmel.2004.1314850

Evidence of surface states for 4H-SiC MESFETs on semi-insulating substrates by current transient spectroscopy

M Gassoumi, N Sghaier + Show 9 more

https://doi.org/10.1109/icmel.2004.1314850

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Publication Date: May 16, 2004

Citations: 5

Affiliation: University of Monastir, Thales (France), Institut National des Sciences Appliquées de Lyon, French National Centre for Scientific Research

#Current Transient Spectroscopy #4H-SiC MESFETs + Show 8 more

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Abstract

Conductance DLTS measurements performed on 4H-SiC MESFETs shows hole-like traps peaks. These levels are associated with surface states. The conductance measurements are interpreted using a model previously developed for GaAs MESFETs which involves the presence of an interface conducting layer between the channel and the passivating layer (SiC/SiO/sub 2/ in our case).

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