Abstract
ABSTRACTAn investigation of 1–5 nm in diameter indium rich clusters in MOCVD InxGa1-xN/GaN quantum well is carried out. To this end, quantitative High Resolution Transmission Electron Microscopy (HRTEM) is coupled with the Finite Element Method (FEM) for the calculation of thin foil relaxation and for image simulation. The measurement of the tetragonal distortion from HRTEM images is a useful tool for the determination of chemical composition in heterostructures. However, for a correct interpretation of the measured lattice distortion on HRTEM images, one needs to take into account the strain averaging across TEM sample and inhomogeneous relaxation of the sample. As a first step, 3D FEM simulation of the relaxation process as a function of the position of indium rich cluster relative to the foil surface is performed. Next, the calculated 3D displacement field is used to simulate the HRTEM images. The results clearly show that the magnitude of the strain field depends on the cluster position. It is concluded that the HRTEM images of indium rich clusters can differ even for the same indium content due to different positions of the clusters.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
