Evidence of pressure-induced multiple electronic topological transitions in BiSe

Abstract

BiSe, an exciting member of homologous family (Bi2)m (Bi2Se3)n [where, m = 1; n = 2], has recently gained attention in thermoelectric research due to its intrinsically ultralow lattice thermal conductivity and promising n-type thermoelectric performance near room temperature. It is experimentally observed to be a weak topological insulator and possesses a fascinating crystal structure where Bi2 bilayer is sandwiched between two Bi2Se3 quintuple layers, thus the structure resembles natural van der Waals heterostructure (Bi2Se3–Bi2–Bi2Se3). Herein, we have studied the pressure induced electronic topological transition (ETT) in BiSe through high pressure (0–10 GPa) synchrotron X-ray diffraction, Raman spectroscopy and first-principles density functional theory (DFT). We have observed clear anomalies at ∼1 and ∼2.2 GPa in the pressure dependent lattice parameters (a, c, and c/a ratio), cell volume, Raman mode shift and line width data suggesting the presence of two ETTs which is further verified by electronic structures and Fermi surface calculations under pressure. The origin of these ETTs is associated with the two different vibrational modes arising from Bi2 bilayer and Bi2Se3 quintuple layers of BiSe, respectively.