Abstract
ABSTRACTEvidence of an oscillating thin-film oxide growth reaction was observed on silicon surfaces during low RF power (13.6 MHz, < I W/cm2) plasma oxidation. Ex-situ ellipsometric, X-ray photoelectron (XPS) and Fourier-transform infrared (FTIR) spectroscopic measurements show that the oscillating growth layer is silicon-rich oxide and its oscillating thickness is very sensitive to both surface preparation and plasma oxidation conditions. A simple low-energy oxygen ion-assisted plasma oxidation and sputtering mechanism is proposed to clarify and to account for the observed oscillating oxide growth reaction.
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