Abstract
Cu(In,Ga)Se${}_{2}$ (CIGS) yields really promising solar cells, but defects and local variations in the composition of this complex alloy also cause modifications to its electronic structure. Understanding the influence of fluctuating potentials on performance is of utmost importance for CIGS-based solar cells. A detailed theoretical study of these fluctuating potentials is developed, and compared to experimental results. The results show unequivocally that losses in open-circuit voltage are correlated with the existence of fluctuating potentials in the CIGS layer, particularly for electrostatic fluctuations as opposed to band-gap variations, and are present at room temperature.
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