Abstract
In order to study the behaviour of fluorapatite towards irradiation due to incorporated alpha-emitters, single crystals of this mineral have been bombarded with 220 keV Pb ions, simulating alpha recoil nuclei, and subsequently irradiated with He ions. The defect concentration measured by RBS associated with channeling steadily decreases upon He-ion irradiation. By changing the energy of the incident He ions in the range 0.3–3.2 MeV, we have shown that this defect annealing phenomenon can be ascribed to the electronic energy loss, while the use of B ions which have slightly higher electronic energy loss in the target induces the opposite effect, i.e., increases the defect concentration.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
