Evidence of Fowler–Nordheim Tunneling in Gate Leakage Current of AlGaN/GaN HEMTs at Room Temperature

Abstract

Dependence of gate leakage current on Al mole fraction of AlGaN/GaN high-electron mobility transistors (HEMTs) is studied using temperature-dependent current-voltage and capacitance-voltage characteristics. The reverse leakage current is mostly dominated by Poole-Frenkel (PF) emission in the structures used in this brief. However, it is observed that at higher mole fractions, due to higher electric field across the barrier, Fowler-Nordheim (FN) tunneling also contributes to the gate leakage current even at room temperature and above. An expression for critical temperature below which FN tunneling component becomes comparable with or more than PF emission component is presented. It is concluded that the dominant gate leakage mechanisms in III-N HEMTs are dependent on mole fraction of the barrier material and the temperature. However, the relative strengths of PF emission and FN tunneling are also influenced by various process-dependent parameters.