Abstract
Time-resolved electroluminescence measurements are carried out on the blue light emitting diodes with InGaN active layer at temperatures from 30 to 530 K. The decay mechanisms of the ultraviolet optical pulses corresponding to the band-to-band recombinations are investigated. The exciton-related recombination is found mainly responsible for this band-edge radiative recombination from 250 to 425 K. A thermal equilibrium model, in which the exciton dissociation process is taken into account, is used to fit the experimental results. The fitted exciton binding energy is about 48.3 meV. This high exciton binding energy is attributed to the indium-related localization effect in InGaN. Moreover, it is also found that the nonradiative lifetimes in these samples are quite long. This is ascribed to the suppression of the nonradiative recombination centers because of the incorporation of indium in GaN material.
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