Abstract
Abstract Surface photovoltage (SPV) measurements on a-Si:H/metal Schottky devices under forward bias are presented. The space-charge density decreases with applied forward bias while both the space-charge width and the apparent diffusion length are essentially constant. These are all attributed to electron trapping in Schottky barrier region. Furthermore, we explore electron trapping effect in a-Si:H on light-induced degradation of a-Si:H solar cells.
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