Abstract
The threshold voltage for the three different conduction components of an accumulation-mode PMOS SOI were experimentally extracted at room and liquid-helium temperatures. A deep-depletion transient effect was observed to play an important role when one of the interfaces was in inversion, even at room temperature. An intuitive physical interpretation is given for the suppression of some current components at liquid-helium temperatures. In addition, a simple model for calculating the silicon-film thickness and the doping level is presented.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
