Abstract
The 1/ f fluctuations of dark-current- and photocurrent-induced noise in implanted n + p Hg 0.5 Cd 0.5 Te photodiodes are analyzed within the diffusion-current-dominated bias region at 300 K. The lifetime of the electrons in the p -type region has been determined experimentally. Therefore, the Hooge parameter a H is well defined by the 1/ f noise spectrum. The a H value, calculated from dark-current-induced 1/ f noise, is in close agreement with the result of Handel's coherent state 1/ f -noise theory, which yields a H = 4.6 x 10 -3 . The 1/ f noise of the photoinduced current without applied bias can be described with the same a H value. These results indicate coherent state quantum 1/ f noise generated by dark current as well as photoinduced current as a result of mobility fluctuations. If both independent types of currents are generated in the photodiode, the resulting 1/ f noise can be sufficiently described only within the concept of coherent state quantum 1/ f noise.
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